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| Transistor 2SC3354 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 4.00.2 3.00.2 0.70.1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 300 150 -55 ~ +150 Unit V V V mA mW C C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Common base reverse transfer capacitance Common emitter reverse transfer capacitance Transition frequency Power gain (Ta=25C) Symbol VCBO VEBO hFE VBE Crb Cre fT* PG Conditions IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 10V, IE = -2mA VCB = 10V, IE = -2mA VCE = 6V, IC = 0, f = 1MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -15mA, f = 200MHz VCB = 10V, IE = -1mA, f = 100MHz 600 min 30 3 25 720 0.8 1 1200 17 1.5 1600 250 mV pF pF MHz dB typ max Unit V V *h FE Rank classification T 600 ~ 1300 S 900 ~ 1600 Rank fT(MHz) 2.00.2 marking +0.2 0.45-0.1 s Absolute Maximum Ratings (Ta=25C) 15.60.5 Optimum for high-density mounting. Allowing supply with the radial taping. High transition frequency fT. 1 Transistor PC -- Ta 500 60 Ta=25C 50 50 2SC3354 IC -- VCE 60 25C VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 40 IB=300A 250A 200A 20 150A 100A 10 50A Collector current IC (mA) 400 Ta=75C 40 -25C 300 30 30 200 20 100 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C -25C IC/IB=10 240 hFE -- IC 1600 VCE=10V fT -- I E f=100MHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 1400 1200 1000 800 600 400 200 VCB=10V 6V 160 Ta=75C 120 25C 80 -25C 40 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 5 120 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Collector output capacitance Cob (pF) Reverse transfer impedance Zrb () IE=0 f=1MHz Ta=25C 4 100 2.0 80 1.6 3 60 1.2 2 40 VCE=6V 10V 0 - 0.1 - 0.3 -1 -3 -10 0.8 1 20 0.4 0 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor PG -- IE 30 f=100MHz Rg=50 Ta=25C 12 VCE=10V 6V 10 VCE=10V f=100MHz Rg=50k Ta=25C 2SC3354 NF -- IE 25 20 Noise figure NF (dB) -1 -3 -10 -30 -100 Power gain PG (dB) 8 15 6 10 4 5 2 0 - 0.1 - 0.3 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Emitter current IE (mA) Emitter current IE (mA) 3 |
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